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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB1034 DESCRIPTION With TO-126 package Low collector saturation voltage High DC current gain DARLINGTON APPLICATIONS For power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage IN Collector-emitter voltage Emitter-base voltage ANG CH EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE -80 -80 -8 -2 -0.5 UNIT V V V A A W ae ae Collector current (DC) Base current (DC) Total power dissipation Junction temperature Storage temperature TC=25ae 15 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-10mA ;IB=0 IC=-1A ;IB=-1mA IC=-1A ;IB=-1mA VCB=-80V; IE=0 VEB=-8V; IC=0 IC=-1A ; VCE=-2V IE=0; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-2V 2000 30 MIN -80 TYP. 2SB1034 SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE COB fT MAX UNIT V -1.5 -2.0 -10 -4 |I V V A mA pF MHz Switching times ton ts tf Fall time Turn-on time Storage time HAN INC SEM GE RL=30| IB1=IB2=1mA VCC=-30V OND IC TOR UC 50 0.4 2.0 0.4 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB1034 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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